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V23990-P825-F-P2-14 Datasheet, PDF (8/16 Pages) Vincotech – Trench Fieldstop IGBT3 Technology
Output Inverter
V23990-P825-F-PM
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
8000
dI0/dt
dIrec/dt
6000
4000
2000
0
0
40
80
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
4
Ω
Output inverter FRED
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10000
Output inverter FRED
dI0/dt
dIrec/dt
8000
6000
4000
2000
120
160
I C (A) 200
0
0
4
8
At
Tj =
VR =
IF =
VGE =
25/150 °C
300
V
100
A
±15
V
12
16 R Gon ( Ω) 20
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
0,50
10-3
K/W
IGBT thermal model values
R (C/W)
0,02
0,08
0,17
0,16
0,03
0,02
0,02
Tau (s)
1,0E+01
1,3E+00
1,6E-01
5,7E-02
5,3E-03
7,6E-04
1,6E-04
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,68
K/W
FRED thermal model values
R (C/W)
0,02
0,08
0,13
0,27
0,08
0,05
0,05
Tau (s)
1,0E+01
1,3E+00
1,6E-01
4,3E-02
6,0E-03
9,5E-04
1,9E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
copyright by Vincotech
8
Revision: 2