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| V23990-K429-A40-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
3000
dI0/dt
2500
dIrec/dt
2000
1500
1000
500
0
0
30
60
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
4
â¦
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
3000
2500
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
2000
1500
1000
500
90
120
I C (A) 150
0
0
4
8
12
16
R gon ( ⦠) 20
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
75
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,58
K/W
IGBT thermal model values
R (C/W)
0,11
0,33
0,08
0,04
0,02
Tau (s)
1,0E+00
1,5E-01
3,6E-02
7,3E-03
4,9E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,75
K/W
FWD thermal model values
R (C/W)
0,04
0,12
0,38
0,12
0,07
Tau (s)
5,1E+00
9,5E-01
2,0E-01
6,1E-02
1,1E-02
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101 10
copyright Vincotech
8
Revision: 5.1
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