V23990-K429-A40-PM Datasheet, PDF (6/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_don
0,1
t_f
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
t_r
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
t_don
t_f
t_r
0,01
0,01
0,001
0,001
0
30
60
90
120
I C (A) 150
0
4
8
With an inductive load at
T_j =
150
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
4
Ω
R_goff =
4
Ω
With an inductive load at
T_j =
150
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
75
A
12
16
R G ( Ω ) 20
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
1
D1,D2,D3,D4,D5,D6,D7 FWD
t_rr
0,8
T_j = T_jmax -25°C
0,6
t_rr
0,4
T_j = 25°C
0,2
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
1
D1,D2,D3,D4,D5,D6,D7 FWD
0,8
T_j = T_jmax -25°C
t_rr
0,6
T_j = 25°C
t_rr
0,4
0,2
0
0
0
30
60
90
120
I C (A) 150
0
4
8
12
16
R g on ( Ω ) 20
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
75
A
±15
V
copyright Vincotech
6
Revision: 5.1