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| V23990-K209-A40-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
300
dI0/dt
dIrec/dt
250
dIo/dtLow T
200
di0/dtHigh T
150
100
dIrec/dtHigh T
50
0
0
3
6
9
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
64
Ç
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
750
600
FWD
dI0/dt
dIrec/dt
450
300
150
dIrec/dtLow T
12
I C (A) 15
0
0
50
100
150
200
250 R gon ( ⦠) 300
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
8
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,84
K/W
IGBT thermal model values
R (C/W)
0,05
0,14
0,65
0,45
0,29
0,13
Tau (s)
4,8E+00
5,9E-01
1,2E-01
3,8E-02
8,5E-03
1,7E-03
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
101
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,53
K/W
FWD thermal model values
R (C/W)
0,06
0,40
1,02
0,55
0,41
0,09
Tau (s)
9,0E+00
4,4E-01
7,9E-02
1,2E-02
1,4E-03
2,9E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101
Copyright by Vincotech
8
Revision: 4.2
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