V23990-K209-A40-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2
1,6
T_j = T_jmax -25°C
1,2
0,8
T_j = 25°C
0,4
0
At ⁰
3
6
9
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
64
Ǒ
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
10
8
T_j = T_jmax -25°C
6
4
T_j = 25°C
2
0
0
3
6
9
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
64
Ǒ
FWD
Q_rr
Q_rr
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
2
1,6
T_j = T_jmax -25°C
1,2
0,8
T_j = 25°C
0,4
FWD
Q_rr
Q_rr
12
I C (A) 15
0
0
50
100
150
200
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
8
A
±15
V
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
10
250 R g on ( Ω) 300
FWD
8
I_RRM
6
I_RRM
4
2
T_j = T_jmax - 25°C
I_RRM
I_RRM
T_j = 25°C
12
I C (A) 15
0
0
50
100
150
200
250 R gon ( Ω ) 300
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
8
A
±15
V
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7
Revision: 4.2