 English |
|
|
|
|
|
|
|
| V23990-K202-A-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology | |||
| |||
| ◁ |
V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
800
600
FWD
dI0/dt
dIrec/dt
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
1200
900
FWD
dI0/dt
dIrec/dt
400
600
200
300
0
0
5
10
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
300
V
15
V
32
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
15
I C (A) 20
0
0
25
50
75
100
125 R gon ( ⦠) 150
At
Tj =
VR =
IF =
VGE =
25/125 °C
300
V
10
A
15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,0
K/W
IGBT thermal model values
R (K/W)
0,04
0,15
0,71
0,61
0,26
0,22
Tau (s)
5,9E+00
5,2E-01
7,5E-02
1,8E-02
2,8E-03
2,7E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,5
K/W
FWD thermal model values
R (K/W)
0,05
0,25
0,88
0,73
0,33
0,26
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
Revision: 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese