V23990-K202-A-PM Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,8
0,6
0,4
0,2
0
0
5
10
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
300
V
15
V
32
Ω
16
Ω
IGBT
E_{on High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,6
0,5
E_{on Low T}
0,4
E_{off High T}
0,3
E_{off Low T}
0,2
E_{off High T}
E_{off Low T}
IGBT
E_{on High T}
E_{on Low T}
0,1
15
I C (A) 20
0
0
25
50
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
300
V
15
V
10
A
75
100
125 R G ( Ω ) 150
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
0,4
0,3
T_j = T_jmax -25°C
0,2
T_j = 25°C
0,1
IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,25
T_j = T_jmax -25°C
0,2
0,15
E_rec
0,1
T_j = 25°C
0,05
IGBT
E_rec
E_rec
0
0
5
10
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
15
V
R_gon =
32
Ω
15
I C (A) 20
0
0
30
60
90
120
R G ( Ω ) 150
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
15
V
I_C =
10
A
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5
Revision: 3