70-W212NMA300SC-M208P Datasheet, PDF (8/28 Pages) Vincotech – Integrated DC-snubber capacitors

70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
40
30
Q_{rr High T}
25
30
20
20
t_p = 10 ms, sine halfwaveT_vj < 150°C ^{#REQFrr L!ow T}
15
#REF!
t_P = 1 ms
T_vj < 150°C
10
10
5
0
At ⁰
150
300
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
0
450
I C (A)
600
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
300
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
300
250
200
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
300
250
200
150
150
I_{RRM High T}
100
100
I_{RRM Low T}
50
50
0
0
100
200
300
400
500 _{I C (A)} 600
0
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
300
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω)
10
FWD
8
R gon ( Ω) ¹⁰
copyright by Vincotech
8
Revision: 5