70-W212NMA300SC-M208P Datasheet, PDF (15/28 Pages) Vincotech – Integrated DC-snubber capacitors

70-W212NMA300SC-M208P
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
50
40
30
20
10
Boost
neutral point IGBT and half bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
40
Q_{rr High T}
30
Q_{rr Low T}
20
10
FWD
Q_{rr High T}
Q_{rr Low T}
0
0
0
At
100
200
300
400
500 _{I C (A)} 600
0
2
4
6
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
300
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
600
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
500
I_{RRM High T}
400
450
I_{RRM Low T}
300
300
200
I_{RRM High T}
150
I_{RRM Low T}
100
0
0
0
100
200
300
400
500 _{I C (A)} 600
0
2
4
6
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
300
A
±15
V
8
R gon ( Ω)
10
FWD
8
R gon ( Ω) 10
copyright by Vincotech
15
Revision: 5