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| 10-FZ122PA050SC01-P997F18 Datasheet, PDF (8/15 Pages) Vincotech – Compact and low inductance design | |||
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Output Inverter
FZ12 / F0122PA050SC01
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
6000
dI0/dt
5000
dIrec/dt
4000
3000
2000
1000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
dIrec/dtLow T
dIo/dtLow T
di0/dtHigh T
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
10000
8000
Output inverter FRED
dI0/dt
dIrec/dt
6000
4000
Tj = 25°C
Tj = Tjmax - 25°C
dIrec/dtHigh T
2000
60
80
I C (A) 100
dIrec/dtHigh T
0
0
8
16
24
32 R gon ( Ω ) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
50
A
±15
V
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,45
K/W
IGBT thermal model values
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,64
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0,04
0,07
0,16
0,10
0,04
0,03
Tau (s)
2,8E+00
5,6E-01
8,6E-02
3,0E-02
2,7E-03
3,7E-04
R (C/W)
0,02
0,08
0,14
0,26
0,08
0,06
Tau (s)
9,5E+00
1,1E+00
1,4E-01
3,4E-02
3,9E-03
4,6E-04
Copyright by Vincotech
8
Revision: 1
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