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| 10-FZ06NBA075SA-P916L33 Datasheet, PDF (8/17 Pages) Vincotech – flowBOOST0 | |||
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INPUT BOOST
10-FZ06NBA075SA-P916L33
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
7500
dI0/dt
dIrec/dt
6000
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
12000
BOOST FWD
dI0/dt
dIrec/dt
4500
9000
3000
6000
1500
3000
0
0
25
50
75
100
125 I C (A) 150
0
0
8
16
24
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
8
â¦
At
Tj =
VR =
IF =
VGS =
25/150 °C
300
V
75
A
±15
V
Figure 19
MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
32 R Gon ( Ω) 40
BOOST FWD
100
100
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,02
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
1011
IGBT thermal model values
R (C/W)
0,037
0,176
0,550
0,179
0,042
0,037
Tau (s)
6,37E+00
8,57E-01
1,57E-01
2,60E-02
3,81E-03
3,09E-04
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,11
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
1011
FWD thermal model values
R (C/W)
0,03
0,13
0,43
0,33
0,12
0,07
Tau (s)
9,19E+00
9,97E-01
1,49E-01
3,47E-02
5,94E-03
3,69E-04
Copyright by Vincotech
8
Revision: 6
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