10-FZ06NBA075SA-P916L33 Datasheet, PDF (5/17 Pages) Vincotech – flowBOOST0

INPUT BOOST
10-FZ06NBA075SA-P916L33
preliminary datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
5
BOOST IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
5
4
4
E_{off High T}
3
E_{off Low T}
3
E_{on High T}
2
2
E_{on Low T}
1
1
0
0
25
50
75
100
With an inductive load at
T_j =
25/150 °C
V_CE =
300
V
V_GS =
±15
V
R_gon =
8
Ω
R_goff =
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
2,0
1,6
0
125 _{I C (A)} 150
0
8
16
24
With an inductive load at
T_j =
25/150 °C
V_CE =
300
V
V_GS =
±15
V
I_C =
75
A
BOOST IGBT
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2,0
1,6
1,2
1,2
E_{rec Low T}
0,8
0,8
0,4
0,4
0,0
0
25
50
75
100
125 _{I C (A)} 150
0,0
0
8
16
24
With an inductive load at
T_j =
25/150 °C
V_DS =
300
V
V_GS =
±15
V
R_gon =
8
Ω
R_goff =
8
Ω
With an inductive load at
T_j =
25/150 °C
V_DS =
300
V
V_GS =
±15
V
I_D =
75
A
BOOST IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
32 R G ( Ω ) 40
BOOST IGBT
E_{rec High T}
E_{rec Low T}
32 R _G ( Ω ) 40
Copyright by Vincotech
5
Revision: 6