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| 10-FZ06NBA030SA-P914L33 Datasheet, PDF (8/17 Pages) Vincotech – flowBOOST0 | |||
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INPUT BOOST
10-FZ06NBA030SA-P914L33
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dI0/dt
dIrec/dt
5000
4000
3000
2000
1000
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
12000
9000
6000
3000
BOOST FWD
dI0/dt
dIrec/dt
0
0
10
20
30
40
50 I C (A) 60
0
0
15
30
45
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
300
V
±15
V
16
â¦
At
Tj =
VR =
IF =
VGS =
25/150 °C
300
V
30
A
±15
V
Figure 19
MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
60 R Gon ( Ω) 75
BOOST FWD
100
100
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,58
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
IGBT thermal model values
R (C/W)
0,034
0,168
0,630
0,427
0,199
0,122
Tau (s)
7,75E+00
9,36E-01
1,45E-01
2,94E-02
5,22E-03
3,91E-04
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,97
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
1011
FWD thermal model values
R (C/W)
0,03
0,17
0,70
0,54
0,33
0,20
Tau (s)
9,53E+00
8,69E-01
1,31E-01
2,74E-02
4,55E-03
3,66E-04
Copyright by Vincotech
8
Revision: 2
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