10-FZ06NBA030SA-P914L33 Datasheet, PDF (6/17 Pages) Vincotech – flowBOOST0

Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
t_doff
t_f
0,1
t_don
0,01
t_r
INPUT BOOST
10-FZ06NBA030SA-P914L33
preliminary datasheet
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
BOOST IGBT
t_doff
t_don
t_f
t_r
0,001
0
10
20
30
With an inductive load at
T_j =
150
°C
V_DS =
300
V
V_GS =
±15
V
R_gon =
16
Ω
R_goff =
16
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,3
0,25
0,2
0,15
0,1
0,05
0
0
10
20
30
At
T_j =
V_DS =
V_GS =
R_gon =
25/150 °C
300
V
±15
V
16
Ω
0,001
40
50 _{I D (A)} 60
0
15
30
45
With an inductive load at
T_j =
150
°C
V_DS =
300
V
V_GS =
±15
V
I_C =
30
A
BOOST FWD
Figure 12
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t_rr = f(R_gon)
0,6
0,5
t_{rr High T}
0,4
0,3
t_{rr Low T}
0,2
0,1
0
40
50 _{I C (A)} 60
0
15
30
45
At
T_j =
V_R =
I_F =
V_GS =
25/150 °C
300
V
30
A
±15
V
60
R G( Ω ) ⁷⁵
BOOST FWD
t_{rr High T}
t_{rr Low T}
60 _{R Gon ( Ω )} 75
Copyright by Vincotech
6
Revision: 2