V23990-P840-X4X-P2-14 Datasheet, PDF (7/20 Pages) Vincotech – 2 Clips housing in 12 and 17mm height

V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 9
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,6
Output inverter FRED diode
Figure 10
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
50
Output inverter FRED diode
0,5
40
0,4
30
0,3
20
0,2
10
0,1
0
0
15
30
45
60
75
R_Gon (Ω)
0
0
15
30
45
60
75
R_Gon(Ω)
At
At
T_j =
125
°C
V_R =
600
V
I_F =
15
A
V_GE =
±15
V
T_j =
125
°C
V_R =
600
V
I_F =
15
A
V_GE =
±15
V
Figure 11
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
Output inverter FRED diode
3,5
3
2,5
2
1,5
1
0,5
0
0
15
30
45
60 _{RGon (Ω)}
75
At
T_j =
125
°C
V_R =
600
V
I_F =
15
A
V_GE =
±15
V
Figure 12
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(R_gon)
5000
Output inverter FRED diode
4000
3000
2000
1000
dIrec/dt
0
0
At
T_j =
125
V_R =
600
I_F =
15
V_GE =
±15
15
°C
V
A
V
dI0/dt
30
45
60 _{RGon (Ω)}
75
copyright Vincotech
7
Revision: 2