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V23990-P840-X4X-P2-14 Datasheet, PDF (4/20 Pages) Vincotech – 2 Clips housing in 12 and 17mm height
Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Power dissipation given Epcos-Typ
B-value
Symbol
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
Rgon=32Ohm
15
tf
Rgoff=32Ohm
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate Vcc=960V
±15
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
600
25
0,0003
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
8
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
8
Tj=25°C
5
5,8
6,5
V
1,6
1,87
2,1
2,22
V
0,05
mA
200
nA
none
Ω
72
24
228
104
0,71
0,62
490
ns
ns
ns
ns
mWs
mWs
pF
50
pF
30
pF
50
nC
2,36
K/W
VF
Ir
IRRM
trr
Qrr Rgon=32Ohm
15
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
7,5
1200
600
8
Tj=25°C
0,8
1,67
2,2
V
Tj=125°C
1,61
Tj=25°C
Tj=125°C
250
mA
Tj=25°C
A
Tj=125°C
10
Tj=25°C
ns
Tj=125°C
427
Tj=25°C
mC
Tj=125°C
1,64
Tj=25°C
A/ms
Tj=125°C
73
Tj=25°C
Tj=125°C
0,69
mWs
3,15
K/W
R25
R100
P
Tol. ±13%
Tol. ±5%
B(25/100) Tol. ±3%
Tj=25°C
19,1
22
24,9
kΩ
Tj=100°C
1411
1486
1560
Tj=25°C
210
mW
Tj=25°C
4000
K
copyright Vincotech
4
Revision: 2