V23990-P649-G-PM Datasheet, PDF (7/13 Pages) Vincotech – Optionally with brake chopper

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
5
4
3
2
1
0
0
10
20
30
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
15
V
R_gon =
32
Ω
R_goff =
16
Ω
Figure 7
Typical switching times as a
function of collector current
t = f(I_C)
10
1
t_f
0,1
0,01
0,001
0
10
20
30
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
15
V
R_gon =
32
Ω
R_goff =
16
Ω
Brake
V23990-P649-G/H-PM
preliminary datasheet
Brake IGBT
E_off
E_on
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
5
4
E_off
3
2
E_rec
1
0
40
I C (A) ⁵⁰
0
30
60
90
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
15
V
I_C =
24
A
Brake IGBT
Figure 8
Typical switching times as a
function of gate resistor
t = f(R_G)
10
t_doff
1
0,1
t_don
t_r
0,01
t_doff
t_f
Brake IGBT
E_on
E_rec
120 R G ( Ω ) 150
Brake IGBT
t_don
t_r
40
IC (A) 50
0,001
0
30
60
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
15
V
I_C =
24
A
90
120 R G ( Ω ) 150
Copyright by Vincotech
7
Revision: 1