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| V23990-P649-G-PM Datasheet, PDF (5/13 Pages) Vincotech – Optionally with brake chopper | |||
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Parameter
BRC inverse diode
Diode forward voltage
Reverse leakage current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of reverse recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
V23990-P649-G/H-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VF
Ir
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
3
1200
Tj=25°C
1
1,65
2,3
Tj=125°C
1,58
V
Tj=25°C
Tj=125°C
250
μA
3,8
K/W
n.A.
K/W
VF
Ir
IRRM
trr
Rgon=32Ohm
Qrr
Rgoff=16Ohm
15
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
25
1200
600
25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,75
2,4
V
1,69
250
μA
44,2
196
3,44
2371
1,34
2,11
A
ns
μC
A/μs
mWs
K/W
n.A.
K/W
Copyright by Vincotech
5
Revision: 1
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