V23990-P635-A-P1-14 Datasheet, PDF (7/18 Pages) Vincotech – IGBT FRED

flow 90PIM 1 600V/30A
V23990-P635-A-PM
preliminary data sheet
V23990-P635-A-02-14
Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
0,5
30
25
0,4
20
0,3
15
0,2
10
0,1
5
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
300 V
30 A
15 V
60 R Gon ( : ) 75
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
300 V
30 A
15 V
60 R Gon ( : ) 75
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
3
2,5
2
1,5
1
0,5
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
300 V
30 A
15 V
60 R Gon ( :) 75
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
2500
2000
1500
dI0/dt
1000
500
dIrec/dt
0
0
15
30
45
60 R Gon ( :) 75
Tj =
VR =
IF=
VGE=
125 °C
300 V
30 A
15 V
co_Cpy_ori_pgh_yt_rb_iy_gT_hy_tco_bE_yle_Vctr_io_nn_cic_os _tech
Finsinger Feld 1, D-85521 Ottobrunn
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