V23990-P635-A-P1-14 Datasheet, PDF (2/18 Pages) Vincotech – IGBT FRED

V23990-P635-A-PM
flow 90PIM 1 600V/30A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
preliminary data sheet
V23990-P635-A-02-14
Datasheet values
Unit
max.
Transistor BRC
Transistor Wechselrichter
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
V_CE
600
V
DC collector current
T_j=150°C
T_h=80°C
I_C
22
A
Kollektor-Dauergleichstrom
T_j=150°C
29
Repetitive peak collector current
t_p=1ms
T_h=80°C
I_cpuls
60
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
T_j=150°C
T_h=80°C
P_tot
44
W
67
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
V_GE
±20
V
SC withstand time
Kurzschlußverhalten
Tj”150°C
VGE=15V
t_SC
6
us
VCE=600/1200 V
max. Chip temperature
max. Chiptemperatur
T_jmax
175
°C
Diode BRC
Diode BRC
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. Chip temperature
max. Chiptemperatur
T_j=150°C
T_h=80°C
I_F
20
A
T_j=150°C
20
t_p=1ms
T_h=80°C
I_FRM
60
A
T_j=150°C
T_h=80°C
P_tot
39
W
59
T_jmax
175
°C
Thermal properties
Thermische Eigenschaften
Storage temperature
Lagertemperatur
Operation temperature
Betriebstemperatur
T_stg
-40…+125
°C
T_op
-40…+125
°C
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
t=1min
V_is
4000
Vdc
Creepage distance
min 12,7
mm
Kriechstrecke
Clearance
min 12,7
mm
Luftstrecke
Additional notes and remarks:
* Allowed number of short circuits must be less than 1000 times, and time duration between short
circuits should be more than 1 second!
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Finsinger Feld 1, D-85521 Ottobrunn
Revision:1