V23990-K242-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Solderless spring contact mounting system

V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
10
Q_rr
8
6
Q_rr
T_j = T_jmax -25°C
4
2
0
At ⁰
At
T_j =
V_CE =
V_GE =
R_gon =
T_j = 25°C
30
60
25/125 °C
300
V
±15
V
8
Ω
90
120
I C (A) 150
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
10
8
T_j = T_jmax -25°C
6
Q_rr
T_j = 25°C
4
Q_rr
2
0
0
8
16
24
32
R g on ( Ω) 40
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
75
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
D1,D2,D3,D4,D5,D6,D7 FWD
T_j = T_jmax -25°C
80
60
I_RRM
40
I_RRM
20
T_j = 25°C
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
T_j = T_jmax - 25°C
D1,D2,D3,D4,D5,D6,D7 FWD
90
T_j = 25°C
60
30
I_RRM
I_RRM
0
0
0
30
60
90
120 I C (A) 150
0
8
16
24
32 R gon ( Ω ) 40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
75
A
±15
V
Copyright by Vincotech
7
Revision: 3.1