V23990-K222-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop technology

V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
5
Q_rr
4
T_j = T_jmax -25°C
3
Q_rr
T_j = 25°C
2
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
5
4
T_j = T_jmax -25°C
3
Q_rr
T_j = 25°C
2
Q_rr
1
1
0
0
At ⁰
10
20
30
40
50 ^I C ^(A) 60
0
16
32
48
64
R gon ( Ω) ₈₀
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
16
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
30
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
30
I_RRM
25
I_RRM
20
D1,D2,D3,D4,D5,D6,D7 FWD
T_j = T_jmax -25°C
T_j = 25°C
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
D1,D2,D3,D4,D5,D6,D7 FWD
60
T_j = T_jmax - 25°C
15
40
T_j = 25°C
10
I_RRM
20
I_RRM
5
0
0
0
10
20
30
40
50 ^I C ^(A) 60
0
16
32
48
64
R gon ( Ω ) ₈₀
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
16
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
30
A
±15
V
Copyright by Vincotech
7
Revision: 3.1