V23990-K222-A-PM Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop technology

V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
2,5
2,0
1,5
1,0
0,5
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2,5
2,0
1,5
1,0
0,5
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0,0
0
10
20
30
40
50 ^I C ^(A) 60
0,0
0
16
32
48
64
R G ( Ω ) ₈₀
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
300
V
±15
V
16
Ω
16
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
300
V
±15
V
30
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
1,0
0,8
T1,T2,T3,T4,T5,T6,T7 IGBT
T_j = T_jmax -25°C
E_rec
0,6
T_j = 25°C
E_rec
0,4
0,2
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
1,0
T1,T2,T3,T4,T5,T6,T7 IGBT
0,8
T_j = T_jmax -25°C
0,6
E_rec
0,4
T_j = 25°C
E_rec
0,2
0,0
0
10
20
30
40
50 ^I C ^(A) 60
0,0
0
16
32
48
64
R G ( Ω ) ₈₀
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
R_gon =
16
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
I_C =
30
A
Copyright by Vincotech
5
Revision: 3.1