V23990-P723-F04-D1-14 Datasheet, PDF (6/12 Pages) Vincotech – Maximum Ratings / Höchstzulässige Werte

fastPACK0 H 2nd gen
Output inverter
V23990-P723-F04-PM
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
0,25
120
100
0,2
80
0,15
60
0,1
40
0,05
20
0
0
10
20
Tj =
VR =
IF=
VGE=
125 °C
400 V
60 A
15 V
30 R Gon ( : ) 40
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
5
4
3
2
1
0
0
10
20
Tj =
VR =
IF=
VGE=
125 °C
400 V
60 A
15 V
30 R Gon ( :) 40
0
0
10
20
Tj =
VR =
IF=
VGE=
125 °C
400 V
60 A
15 V
30
R Gon ( : ) 40
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
7000
6000
5000
dI0/dt
4000
3000
dIrec/dt
2000
1000
0
0
10
20
Tj =
VR =
IF=
VGE=
125 °C
400 V
60 A
15 V
30 R Gon ( :) 40
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