V23990-P768-A-D3-14 Datasheet, PDF (5/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC

V23990-P768-A-PM
Parameter
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_d(off)
Rgoff=16 Ω
±15
t_f
Rgon=16 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
±15
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
1200
0
600
25
0,0012
35
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
35
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
960
Tj=25°C
Value
Min
Typ
Max
Unit
5
5,8
6,5
V
1,91
2,3
V
2,37
0,25
mA
200
nA
none
92
84
21
24
182
253
76
116
1,86
2,64
1,78
2,95
1950
Ω
ns
mWs
155
pF
115
200
nC
0,73
K/W
0,48
V_F
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
10
Tj=25°C
1,1
1,89
2,1
Tj=150°C
1,8
V
1,86
K/W
1,23
K/W
V_F
25
I_r
±15
600
35
I_RRM
t_rr
Q_rr Rgon=16 Ω
±15
600
35
di(rec)max
/dt
E_rec
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,9
2,2
1,88
10
27,41
41,04
300
322
2,68
5,19
254
259
2,68
5,19
1,24
0,82
V
µA
A
ns
µC
A/µs
mWs
K/W
R₂₅ Tol. ±5%
D_R/R R100=1486.1Ω
P
B_(25/100) Tol. ±3%
Tj=25°C
20,9
22
23,1
kΩ
Tc=100°C
2,9
%/K
Tj=25°C
210
mW
Tj=25°C
4000
K
copyright Vincotech
5
Revision: 3