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| V23990-P768-A-D3-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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V23990-P768-A-PM
Output Inverter
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
4000
dI0/dt
dIrec/dt
3000
2000
1000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
9000
7500
Output inverter FWD
dI0/dt
dIrec/dt
6000
4500
3000
1500
60
80
I C (A) 100
0
0
8
16
24
32 R Gon ( â¦) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
50
A
±15
V
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FWD
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
At
D=
tp / T
RthJH =
0,583
K/W
Single device heated
RthJH =
0,68
K/W
AlI devices heated
IGBT thermal model values
R (C/W)
0,07
0,13
0,27
0,08
0,04
Tau (s)
2,1E+00
2,4E-01
5,1E-02
1,2E-02
8,6E-04
R (C/W)
0,17
0,13
0,27
0,08
0,04
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
tp / T
RthJH =
0,83
K/W
Single device heated
RthJH =
0,83
AlI devices heated
FWD thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
100
t p (s) 10110
K/W
R (C/W)
0,02
0,08
0,22
0,39
0,07
0,05
Tau (s)
9,7E+00
1,1E+00
1,3E-01
2,5E-02
2,0E-03
2,9E-04
R (C/W)
0,02
0,08
0,22
0,39
0,07
0,05
copyright Vincotech
10
Revision: 3
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