V23990-P767-A-D3-14 Datasheet, PDF (5/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC

V23990-P767-A-PM
Parameter
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Brake FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) VCE=VGE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=32 Ω}
±15
t_f
Rgon=32 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
15
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
0,00085
Tj=25°C
Tj=150°C
5
5,8
6,5
V
25
Tj=25°C
Tj=150°C
1,87
2,2
2,32
V
1200
Tj=25°C
Tj=150°C
0,25
mA
0
Tj=25°C
Tj=150°C
200
nA
none
Ω
600
25
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
149
150
23
28
227
ns
300
73,2
108
1,9
2,84
1,25
mWs
2,1
1393
25
Tj=25°C
110
pF
82
960
Tj=25°C
143
nC
0,85
K/W
0,56
V_F
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
10
Tj=25°C
1,1
1,69
2,1
Tj=150°C
1,63
V
1,92
K/W
1,27
K/W
V_F
25
I_r
±15
600
25
I_RRM
t_rr
Q_rr Rgon=32Ω
±15
600
25
di(rec)max
/dt
E_rec
R_thJH
R_thJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,93
2,2
1,91
V
10
µA
21,57
24,85
318
510
2,41
4,97
382
76
2,41
4,97
A
ns
µC
A/µs
mWs
1,26
K/W
0,83
R₂₅ Tol. ±5%
D_R/R R100=1486.1Ω
P
B_(25/100) Tol. ±3%
Tj=25°C
20,9
22
23,1
kΩ
Tc=100°C
2,9
%/K
Tj=25°C
210
mW
Tj=25°C
4000
K
copyright Vincotech
5
Revision: 3