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| V23990-P767-A-D3-14 Datasheet, PDF (10/24 Pages) Vincotech – 3~rectifier,BRC,Inverter, NTC | |||
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V23990-P767-A-PM
Output Inverter
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
4000
dI0/dt
dIrec/dt
3000
Output inverter FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10500
9000
Output inverter FWD
dI0/dt
dIrec/dt
7500
2000
6000
4500
1000
3000
1500
0
0
10
20
30
40
50
60 I C (A) 70
0
0
15
30
45
60 R Gon ( â¦) 75
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
16
â¦
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
36
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FWD
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
1011 0
At
D=
tp / T
RthJH =
0,759
K/W
Single device heated
RthJH =
0,87
K/W
AlI devices heated
IGBT thermal model values
R (C/W)
0,07
0,13
0,32
0,16
0,05
0,04
Tau (s)
2,2E+00
2,9E-01
5,5E-02
1,5E-02
1,3E-03
2,2E-04
R (C/W)
0,18
0,13
0,32
0,16
0,05
0,04
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
tp / T
RthJH =
0,95
K/W
Single device heated
RthJH =
0,95
AlI devices heated
FWD thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 10110
K/W
R (C/W)
0,02
0,08
0,18
0,42
0,16
0,10
Tau (s)
9,5E+00
1,3E+00
1,5E-01
3,1E-02
7,1E-03
6,2E-04
R (C/W)
0,02
0,08
0,18
0,42
0,16
0,10
copyright Vincotech
10
Revision: 3
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