V23990-P629-F56-PM Datasheet, PDF (5/11 Pages) Vincotech – Maximum Ratings

fastPACK0
Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
0,5
V23990-P629F56
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
100
0,4
80
0,3
60
0,2
40
0,1
20
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
600 V
25 A
±15 V
60 R Gon ( : ) 75
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Qrr = f (Rgon)
5
4
3
2
1
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
600 V
25 A
±15 V
60 R Gon ( :) 75
0
0
15
30
45
Tj =
VR =
IF=
VGE=
125 °C
600 V
25 A
±15 V
60 R Gon ( : ) 75
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
6000
5000
4000
3000
dI0/dt
2000
dIrec/dt
1000
0
0
15
30
45
60 R Gon ( :) 75
Tj =
VR =
IF=
VGE=
125 °C
600 V
25 A
±15 V
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