30-F212PMA075M701-L889A70 Datasheet, PDF (5/9 Pages) Vincotech – Open emitter configuration

30-F212PMA075M701-L889A70
target datasheet
Characteristic Values
Parameter
Brake Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
f = 1 MHz
Cres
25
0,0017
125
25
15
50
150
0
1200
25
20
0
25
0
25
25
5,3
5,8
6,3
V
1,58
1,88
2,07
V
2,30
1
µA
120
nA
4
Ω
2800
pF
100
Thermal
Thermal resistance junction to sink
Brake Diode
Static
Forward voltage
Reverse leakage current
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
VF
Ir
25
25
150
25
1200
150
0,54
K/W
2,47
2,74
V
2,49
60
µA
3300
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
Brake Sw. Protection Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
25
10
150
1200
25
1,29
K/W
1,77
2,05
V
1,68
2,7
µA
Thermal
Thermal resistance junction to sink
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
2,07
K/W
Copyright Vincotech
5
19 Oct. 2016 / Revision 1