30-F212PMA075M701-L889A70 Datasheet, PDF (4/9 Pages) Vincotech – Open emitter configuration

30-F212PMA075M701-L889A70
target datasheet
Parameter
Rectifier Diode
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistance junction to sink
Inverter Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal
Thermal resistance junction to sink
Inverter Diode
Static
Forward voltage
Thermal
Thermal resistance junction to sink
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
VF
Ir
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
25
75
125
25
1600
145
1,10
1,8
V
1,05
50
µA
1100
0,45
K/W
VGE(th) VGE = VCE
VCEsat
ICES
IGES
rg
Cies
Coes
Cres
Qg
0,0075 25
25
15
75
125
150
0
1200
25
20
0
25
0
10
25
15
600
75
25
5,4
6
6,6
V
1,55
2,05
1,75
V
1,80
110
µA
500
nA
4
Ω
16000
480
pF
190
490
nC
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
0,48
K/W
VF
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
25
100
125
150
1,82
2,1
1,96
V
1,97
0,58
K/W
Copyright Vincotech
4
19 Oct. 2016 / Revision 1