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| V23990-P631-A-P1-14 Datasheet, PDF (4/18 Pages) Vincotech – Output inverter IGBT | |||
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V23990-P631-A-PM
preliminary data sheet
flow 90PIM 1 600V/6A
Characteristic values/ Charateristische Werte
Description
Symbol
Conditions
T(C°)
Other conditions
(Rgon-Rgoff)
V23990-P631-A-02-14
Datasheet values
Unit
VR(V) IC(A)
VGE(V) VCE(V) IF(A)
VGS(V) VDS(V) Id(A) Min Typ Max
Transistor BRC
Transistor BRC
Gate emitter threshold voltage
Gate-Schwellenspannung
Collector-emitter saturation voltage
Kollektor-Emitter Sättigungsspannung
Collector-emitter cut-off
Kollektor-Emitter Reststrom
Gate-emitter leakage current
Gate-Emitter Reststrom
Integrated Gate resistor
Integrirter Gate Widerstand
Turn-on delay time
Einschaltverzögerungszeit
Rise time
Anstiegszeit
Turn-off delay time
Abschaltverzögerungszeit
Fall time
Fallzeit
Turn-on energy loss per pulse
Einschaltverlustenergie pro Puls
Turn-off energy loss per pulse
Abschaltverlustenergie pro Puls
SC withstand time
KurzschluÃverhalten
Input capacitance
Eingangskapazität
Output capacitance
Ausgangskapazität
Reverse transfer capacitance
Rückwirkungskapazität
Gate charge
Gate Ladung
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
td(on)
tr
td(off)
tf
Eon
Eoff
tSC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Ciss
Coss
Cies
Qgate
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
RthJH
VCE=VGE
15
0
20
Rgon=32È
15
Rgoff=16È
Rgon=32È
15
Rgoff=16È
Rgon=32È
15
Rgoff=16È
Rgon=32È
15
Rgoff=16È
Rgon=32È
15
Rgoff=16È
Rgon=32È
15
Rgoff=16È
f=1MHz
0
f=1MHz
0
f=1MHz
0
Thermal grease
thicknessÂ50um
Warmeleitpaste
DickeÂ50um È = 0,61 W/mK
0,00009 5
6
600
0
300
6
300
6
300
6
300
6
300
6
300
6
25
25
25
5,8
6,5
V
1,49
2
V
1,69
0,06
mA
350
nA
none
Ohm
10,8
11,5
131,5
104,5
0,11
0,17
ns
ns
ns
ns
uWs
uWs
us
0,368
nF
0,028
nF
0,011
nF
tbd
nC
3,1
K/W
2,046
Diode BRC
Diode BRC
Diode forward voltage
DurchlaÃspannung
Reverse current
Sperrstrom
Reverse recovery time
Sperreverzögerungszeit
Reverse recovered charge
Sperrverzögerungsladung
Reverse recovery energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
VF Tj=25°C
Tj=125°C
Ir
Tj=25°C
Tj=125°C
trr
Tj=25°C
Tj=125°C
Qrr Tj=25°C
Tj=125°C
Erec Tj=25°C
Tj=125°C
Rgon=32È
Rgon=32È
Rgon=32È
Rgon=32È
6
15
600
6
15
300
6
15
300
6
15
300
6
RthJH
Thermal grease
thicknessÂ50um
Warmeleitpaste
DickeÂ50um È = 0,61 W/mK
1,65 2,1
1,59
0,06
183,5
0,44
0,09
V
uA
ns
uC
uWs
3,74
K/W
2,4684
NTC-Thermistor
NTC-Widerstand
Rated resistance
Nennwiderstand
Deviation of R100
Abweichung von R100
Power dissipation given Epcos-Typ
Verlustleistung Epcos-Typ angeben
B-value
B-Wert
R25 Tj=25°C
DR/R Tc=100°C
P Tj=25°C
B(25/100) Tj=25°C
Tol. ±5%
R100=1503È
Tol. ±3%
20,9
22
23,1 kOhm
2,9
%/K
210
mW
3980
K
Ccoopyprigyhrt ibgy hTytcobEylecVtroinniccsotech
Finsinger Feld 1, D-85521 Ottobrunn
Revision:1
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