V23990-P585-X2X-D2-14 Datasheet, PDF (4/24 Pages) Vincotech – Industrial drives Embedded drives

V23990-P585-*2*-PM
Parameter
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
I_RRM
t_rr
Q_rr Rgon=16 Ω
-15
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
R_thJH
Preapplied
Phase change
material
30
300
30
Tj=25°C
1,25
1,75
1,95
Tj=125°C
1,70
V
Tj=25°C
29
Tj=125°C
34
A
Tj=25°C
35
Tj=125°C
183
ns
Tj=25°C
1,20
Tj=125°C
2,16
µC
Tj=25°C
Tj=125°C
2200
1576
A/µs
Tj=25°C
Tj=125°C
0,23
0,45
mWs
2,07
K/W
1,78
K/W
V_GE(th) V_CE=V_GE
0,00029
Tj=25°C
Tj=125°C
5
5,8
6,5
V
V_CE(sat)
15
20
Tj=25°C
1,1
1,55
1,9
Tj=125°C
1,75
V
I_CES
0
600
Tj=25°C
Tj=125°C
0,04
1
mA
I_GES
20
0
Tj=25°C
Tj=125°C
300
nA
R_gint
-
Ω
t_d(on)
t_r
t_{d(off) Rgoff=32 Ω}
±15
300
20
t_f
Rgon=32 Ω
E_on
E_off
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
126
128
18
21
161
ns
179
105
114
0,44
0,59
0,49
mWs
0,63
C_ies
1100
C_oss f=1MHz
0
25
20
Tj=25°C
71
pF
C_rss
32
Q_Gate
15
480
20
Tj=25°C
120
nC
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
2,12
K/W
R_thJH
Preapplied
Phase change
material
1,83
K/W
copyright Vincotech
4
Revision: 2