V23990-P585-X2X-D2-14 Datasheet, PDF (3/24 Pages) Vincotech – Industrial drives Embedded drives

V23990-P585-*2*-PM
Parameter
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
V_to
r_t
I_r
R_thJH
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Preapplied
Phase change
material
30
30
30
1500
Tj=25°C
0,8
1,16
1,6
Tj=125°C
1,13
V
Tj=25°C
0,90
Tj=125°C
0,78
V
Tj=25°C
Tj=125°C
8
11
mΩ
Tj=25°C
Tj=150°C
2
mA
1,89
K/W
1,17
K/W
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=16 Ω}
15
t_f
Rgon=16 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
15
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
R_thJH
Preapplied
Phase change
material
0,00043
Tj=25°C
Tj=125°C
4,1
4,9
5,7
V
30
Tj=25°C
1,1
1,70
1,9
Tj=125°C
1,77
V
600
Tj=25°C
Tj=125°C
0,04
1
mA
0
Tj=25°C
Tj=125°C
300
nA
-
Ω
300
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
93
93,5
15
17,5
141
159,5
67,1
86,7
0,42
0,63
0,59
0,80
ns
mWs
1630
25
Tj=25°C
108
pF
50
480
30
Tj=25°C
167
nC
1,6
K/W
1,37
K/W
copyright Vincotech
3
Revision: 2