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10-PZ12NMA027MR-M340F68Y Datasheet, PDF (4/6 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors
10-PZ12NMA027MR-M340F68Y
targat datasheet
Parameter
T2, T3 Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgoff=tbdΩ
Rgon=tbdΩ
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
Preaplied Phase
RthJH change material
0,0008
Tj=25°C
Tj=125°C
3,3
4,0
4,7
V
80
Tj=25°C
Tj=150°C
1,65
2,22
V
650
Tj=25°C
Tj=175°C
0,08
mA
0
Tj=25°C
Tj=125°C
240
nA
none
Ω
Tj=25°C
tbd
Tj=125°C
tbd
Tj=25°C
tbd
Tj=125°C
tbd
Tj=25°C
tbd
ns
Tj=125°C
tbd
Tj=25°C
tbd
Tj=125°C
tbd
Tj=25°C
tbd
Tj=125°C
Tj=25°C
tbd
tbd
mWs
Tj=125°C
tbd
5000
25
Tj=25°C
80
pF
18
520
80
Tj=25°C
190
nC
1,25
K/W
D2,D3 Neutral Point IGBT Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
VF
RthJH
Preaplied Phase
change material
6
Tj=25°C
1,23
1,55
2,1
Tj=125°C
1,50
V
3,70
K/W
D5, D6 H-bridge FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
VF
Ir
IRRM
trr
Qrr Rgon=tbd Ω
di(rec)max
/dt
Erec
RthJH
Preaplied Phase
change material
10
1200
Tj=25°C
1
Tj=150°C
1,49
1,9
1,77
V
Tj=25°C
Tj=175°C
250
µA
Tj=25°C
tbd
Tj=150°C
tbd
A
Tj=25°C
tbd
Tj=150°C
tbd
ns
Tj=25°C
tbd
Tj=150°C
tbd
µC
Tj=25°C
Tj=150°C
tbd
tbd
A/µs
Tj=25°C
Tj=150°C
tbd
tbd
mWs
2,50
K/W
DC link Capacitor
C value
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
C
R
∆R/R R100=1486 Ω
P
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
270
nF
T=25°C
T=25°C
T=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
-5
+5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright by Vincotech
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Revision: 1