10-PZ12NMA027MR-M340F68Y Datasheet, PDF (1/6 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

flowMNPC 0-SIC
Features
● Rohm™ Silicon Carbide Power MOSFET
● Rohm™ Silicon Carbide Power Schottky Diode
● MNPC Topology with Splitted Output
● Ultra Low Inductance with Integrated DC-capacitors
● Extremely Fast Switching with No "Tail" Current
● Unsensitivity for Cross Through Conduction
● Solderless Press-fit Mounting Technology
● Temperature sensor
Target Applications
● High Efficient Solar Inverter
● UPS
Types
● 10-PZ12NMA027MR-M340F68Y
10-PZ12NMA027MR-M340F68Y
targat datasheet
1200V/ 30mΩ
flow0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
T1, T4 H-bridge MOSFET
Drain-source break down voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
D7, D8 Neutral Point FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
Value
Unit
V_DSS
I_D
I_Dpulse
P_tot
V_GS
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
1200
V
T_h=80°C
40
A
240
A
T_h=80°C
85
W
-6 / 22
V
150
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
650
V
T_h=80°C
28
A
120
A
T_h=80°C
63
W
175
°C
copyright by Vincotech
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