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| V23990-P633-A-P1-14 Datasheet, PDF (3/18 Pages) Vincotech – IGBT FRED | |||
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V23990-P633-A-PM
preliminary data sheet
flow 90PIM 1 600V/15A
Characteristic values/ Charateristische Werte
Description
Symbol
Conditions
T(C°)
Other conditions
(Rgon-Rgoff)
V23990-P633-A-02-14
VGE(V) VCE(V)
VGS(V) VDS(V)
Datasheet values
Unit
IC(A)
IF(A)
Id(A) Min Typ Max
Input Rectifier Bridge
Gleichrichter
Forward voltage
DurchlaÃpannung
Threshold voltage (for power loss calc. only)
Schleusenspannung
Slope resistance (for power loss calc. only)
Ersatzwiderstand
Reverse current
Sperrstrom
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
VF
Vto
rt
Ir
RthJH
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
RthJC
Thermal grease
thicknessÂ50um
Warmeleitpaste
DickeÂ50um È = 0,61 W/mK
30
30
30
1500
1,22 1,5
1,18
0,91
0,81
0,011
0,012
0,01
V
V
Ohm
mA
1,75
K/W
1,155
Transistor Inverter
Transistor Wechselrichter
Gate emitter threshold voltage
Gate-Schwellenspannung
Collector-emitter saturation voltage
Kollektor-Emitter Sättigungsspannung
Collector-emitter cut-off
Kollektor-Emitter Reststrom
Gate-emitter leakage current
Gate-Emitter Reststrom
Integrated Gate resistor
Integrirter Gate Widerstand
Turn-on delay time
Einschaltverzögerungszeit
Rise time
Anstiegszeit
Turn-off delay time
Abschaltverzögerungszeit
Fall time
Fallzeit
Turn-on energy loss per pulse
Einschaltverlustenergie pro Puls
Turn-off energy loss per pulse
Abschaltverlustenergie pro Puls
SC withstand time
KurzschluÃverhalten
Input capacitance
Eingangskapazität
Output capacitance
Ausgangskapazität
Reverse transfer capacitance
Rückwirkungskapazität
Gate charge
Gate Ladung
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
td(on)
tr
td(off)
tf
Eon
Eoff
tSC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
Coss
Crss
QGate
RthJH
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
RthJC
VCE=VGE
15
0
20
Rgoff=8 È
Rgon=16 È
15
Rgoff=8 È
Rgon=16 È
15
Rgoff=8 È
Rgon=16 È
15
Rgoff=8 È
Rgon=16 È
15
Rgoff=8 È
Rgon=16 È
15
Rgoff=8 È
Rgon=16 È
15
f=1MHz
0
f=1MHz
0
f=1MHz
0
Thermal grease
thicknessÂ50um
Warmeleitpaste
DickeÂ50um È = 0,61 W/mK
0,00021 4,5
5,8
7
15
600
1,52 2,1
V
1,7
0,11
mA
0
350
nA
none
Ohm
300
15
300
15
300
15
300
15
300
15
300
15
15
15
156
91
0,318
0,41
ns
ns
ns
ns
mWs
mWs
us
25
0,86
nF
25
0,055
nF
25
0,024
nF
tbd
nC
2,4
K/W
0,63
K/W
Diode Inverter
Diode Wechselrichter
Diode forward voltage
DurchlaÃspannung
Peak reverse recovery current
Rückstromspitze
Reverse recovery time
Sperreverzögerungszeit
Reverse recovered charge
Sperrverzögerungsladung
Reverse recovered energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
VF
IRM
trr
Qrr
Erec
RthJH
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
RthJC
diF/dt = 436 A/us
0
diF/dt = 436 A/us
0
diF/dt = 436 A/us
0
diF/dt = 436 A/us
0
Thermal grease
thicknessÂ50um
Warmeleitpaste
DickeÂ50um È = 0,61 W/mK
10
300
10
300
10
300
10
300
10
1,79 2,1
1,68
13,25
231
1,05
0,222
2,94
1,03
V
A
ns
uC
mWs
K/W
K/W
cCopoyrpighyt rbiygThyctobElyectVroninicscotech
Finsinger Feld 1, D-85521 Ottobrunn
Revision:1
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