10-FZ122PB100SH01-M819F38 Datasheet, PDF (3/7 Pages) Vincotech – High efficiency fast IGBT4 HS half-bridge

10-FZ122PB100SH01-M819F38
10-PZ122PB100SH01-M819F38Y
target datasheet
Half-bridge Switch
Parameter
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Thermal
Thermal resistance junction to sink
Characteristic Values
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
r_g
C _ies
C _res
f=1 MHz
Conditions
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min
Value
Typ
Max
Unit
25
0,0038
125
25
15
100
125
150
0
1200
25
125
25
20
0
125
0
25
25
5,1
5,8
6,4
V
1,90
2,1
V
2,30
10
µA
120
nA
7,5
Ω
6300
pF
270
R _th(j-s)
Thermal foil
thickness=76um
Kunze foil KU-ALF5
0,31
K/W
Half-bridge Diode
Parameter
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistance junction to sink
Symbol
V_F
I_r
Conditions
V _r [V] I _F [A] T _j [°C] Min
Value
Typ
Max
Unit
25
100
125
150
1200
25
150
2,50
2,52
V
2,37
120
µA
17700
R _th(j-s)
Thermal foil
thickness=76um
Kunze foil KU-ALF5
0,45
K/W
Copyright Vincotech
3
01 Nov. 2015 / Revision 1