10-FZ122PB100SH01-M819F38 Datasheet, PDF (2/7 Pages) Vincotech – High efficiency fast IGBT4 HS half-bridge

10-FZ122PB100SH01-M819F38
10-PZ122PB100SH01-M819F38Y
target datasheet
Parameter
Half-bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Total power dissipation
Maximum Junction Temperature
Module Properties
Parameter
Thermal Properties
Storage temperature
Operation Junction Temperature
Isolation Properties
Isolation voltage
Creepage distance
Clearanc e
Clearanc e
Comparative Tracking Index
Symbol
Conditions
V _RRM
I_F
I _FSM
I ²t
P _tot
T _jmax
T _j = T _jmax
50 Hz Single Half Sine Wave
t _p = 10 ms
T _j = T _jmax
T _s = 80°C
T _j = 150°C
T _s = 80°C
Value
1200
93
550
1513
211
175
Symbol
Conditions
Value
Unit
V
A
A
A²s
W
°C
Unit
T stg
- 40…+125
°C
T jop
-40…+(T jmax - 25)
°C
V isol
DC voltage
t p=2s
4000
V
min 12,7
mm
for solder pins
9,12
mm
for Press-fit pins
9,54
mm
CTI
>200
Copyright Vincotech
2
01 Nov. 2015 / Revision 1