10-FZ122PB100SC02-M819F08 Datasheet, PDF (3/7 Pages) Vincotech – High efficiency IGBT4 half-bridge

10-FZ122PB100SC02-M819F08
10-F0122PB100SC02-M819F09
target datasheet
Half-bridge Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Reverse transfer capac itance
Thermal
Thermal resistance junc tion to sink
Characteristic Values
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
f=1 MHz
C _res
Conditions
Value
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min Typ Max
Unit
25
0,0038
125
25
15
100
125
150
25
0
1200
125
25
20
0
125
0
25
25
5,1
5,8
6,4
V
1,53
1,90
2,1
V
2,30
10
µA
120
nA
7,5
Ω
6300
pF
270
ph a s e -cha ng e
R _th(j-s) material
ʎ=3,4W /mK
0,46
K/W
Half-bridge Diode
Parameter
Static
Forward voltage
Reverse leakage current
T hermal
Thermal resistance junction to sink
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
100
125
25
1200
150
1,35
1,83
2,05
V
1,86
18
µA
R th(j-s)
phase-change
ma te ria l
ʎ =3,4W /mK
0,66
K/W
Copyright Vincotech
3
01 Nov. 2015 / Revision 1