10-FZ122PB100SC02-M819F08 Datasheet, PDF (2/7 Pages) Vincotech – High efficiency IGBT4 half-bridge

10-FZ122PB100SC02-M819F08
10-F0122PB100SC02-M819F09
target datasheet
Parameter
Half-bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
Module Properties
Parameter
Thermal Properties
Storage temperature
Operation Junction Temperature
Isolation Properties
Isolation voltage
Creepage distance
Clearanc e
Clearanc e
Comparative Tracking Index
Symbol
Conditions
V RRM
IF
I FRM
P tot
T jmax
T j = T jmax
T j = T jmax
T s = 80°C
T s = 80°C
Value
1200
84
200
144
175
Unit
V
A
A
W
°C
Symbol
T stg
T jop
Conditions
Value
Unit
- 40…+125
°C
-40…+(T jmax - 25)
°C
V isol
DC voltage
t p=2s
4000
V
min 12,7
mm
for 12 mm housing
9,12
mm
for 17 mm housing
min 12,7
mm
CTI
>200
Copyright Vincotech
2
01 Nov. 2015 / Revision 1