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10-FZ062TA040FB-P984D18 Datasheet, PDF (3/20 Pages) Vincotech – Compact and low inductance design
10-FZ062TA040FB-P984D18/-FB01-P984D28/-FB02-P984D38/-FB03-P984D48
preliminary datasheet
Parameter
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink per chip
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VF
Vto
rt
Ir
RthJH
Thermal grease
thickness≤50um
λ =1 W/mK
30
30
30
1500
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1.16
1.4
1.11
V
0.9
0.77
V
9
12
mΩ
0.02
2
mA
1.72
K/W
VF
Vto
rt
Ir
tGD
Ig=0,5A
dig/dt=0,5A/us
tGR
Ig=0,2A
dig/dt=0,2A/us
(dv/dt)cr
(di/dt)cr
tq
IH
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
VD=6V
IL
tp=10us
Ig=0,2A
VGT VD=6V
IGT
VD=6V
VGD
IGD
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
30
30
30
800
VD=1/2Vdrm
VD=2/3Vdrm
VD=2/3Vdrm 40
100
26
VD=1/2Vdrm
VD=1/2Vdrm
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=-40°C
Tj=25°C
Tj=-40°C
Tj=125°C
Tj=125°C
1.25
1.6
1.22
V
0.93
0.82
V
0.011
0.014
mΩ
0.05
2
mA
2
μs
<1
μs
500
V/μs
150
A/μs
150
μs
50
mA
90
mA
1.3
1.6
V
11
28
50
mA
0.2
V
1
mA
1.57
K/W
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Vce
0.002
Tj=25°C
Tj=125°C
3
4
5
V
50
Tj=25°C
Tj=125°C
2.74
3.3
3.25
V
0
600
Tj=25°C
Tj=125°C
40
3.25
uA
20
0
Tj=25°C
Tj=125°C
0.2
uA
n.a.
Ω
td(on)
tr
td(off) Rgoff=8Ω
15
tf
Rgon=8Ω
Eon
Eoff
400
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
22
22.6
14
14.6
327.6
354.2
9.4
11.1
0.5052
0.7837
0.7981
0.968
ns
mWs
Cies
2572
Coss f=1MHz
0
25
Tj=25°C
245
pF
Crss
158
QGate
15
480
50
Tj=25°C
158
nC
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
0.99
K/W
Copyright by Vincotech
3
Revision: 2