 English |
|
|
|
|
|
|
|
| 10-FZ062TA040FB-P984D18 Datasheet, PDF (10/20 Pages) Vincotech – Compact and low inductance design | |||
| |||
| ◁ |
10-FZ062TA040FB-P984D18/-FB01-P984D28/-FB02-P984D38/-FB03-P984D48
preliminary datasheet
PFC
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
24000
Tj = Tjmax - 25°C
20000
Tj = 25°C
16000
12000
PFC FRED
dIr/dt25
dIr/dt125
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
24000
20000
dIrec/dt25
dIrec/dt125
16000
12000
8000
4000
0
0
dI0/dt25
dI0/dt125
10
20
30
40
50
60
70
80
9I0C (A) 100
8000
4000
dI0/dt25
dI0/dt125
0
0
8
16
24
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
15
V
8
â¦
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
PFC SWITCH
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
30
A
15
V
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
PFC FRED
TjT=j =Tj2m5ax°C- 25°C
32 R g on ( Ω) 40
PFC FRED
100
100
10-1
10-2
10-5
10-4
10-3
10-2
D=
RthJH =
tp / T
0.99
K/W
IGBT thermal model values
R (C/W)
0.049
0.198
0.559
0.129
0.030
0.022
Tau (s)
4.52E+00
6.47E-01
1.37E-01
2.16E-02
2.42E-03
2.71E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
D=
RthJH =
tp / T
1.87
K/W
FRED thermal model values
R (C/W)
0.04
0.21
0.76
0.57
0.18
0.11
Tau (s)
1.03E+01
9.26E-01
1.43E-01
3.47E-02
4.85E-03
6.60E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
Copyright by Vincotech
10
Revision: 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese