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| 10-F106NIA150SA-M136F Datasheet, PDF (3/27 Pages) Vincotech – Neutral-point-Clamped inverter | |||
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10-F106NIA150SA-M136F
Characteristic Values
Parameter
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Symbol
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
td(off)
tf
Rgon=4 â¦
Rgoff=4 â¦
Eon
Eoff
Cies
0,0024
Tj=25°C
Tj=150°C
15
150
Tj=25°C
Tj=150°C
0
600
Tj=25°C
Tj=150°C
20
0
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
±15
350
150
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Coss f=1MHz
0
25
Tj=25°C
Crss
QGate
15
480
150
Tj=25°C
RthJH
Thermal grease
thicknessâ¤50um
λ = 0,81 W/mK
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
VF
IRRM
trr
Qrr Rgoff=4 â¦
di(rec)max
/dt
Erec
150
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
±15
350
150
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thicknessâ¤50um
λ = 0,81 W/mK
Note: All characteristic values are related to gates of paralell IGBTs connected together
Value
Min
Typ
Max
5
5,8
6,5
1,05
1,57
1,85
1,73
60
1,4
none
161
162
24
28
221
249
82
114
1,01
1,75
4,10
5,92
9240
576
274
940
0,574
1,2
1,69
1,9
1,75
150
178
119
148
8,6
13,7
4704
3013
2,30
3,63
1,288
Unit
V
V
µA
µA
â¦
ns
mWs
pF
nC
K/W
V
A
ns
µC
A/µs
mWs
K/W
Copyright by Vincotech
3
Revision: 5
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