10-FY07NPA150SM01-L364F08 Datasheet, PDF (24/32 Pages) Vincotech – Optimized for full rated bi-directional usage (4 quadrant operation)

10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Out. Boost Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collect or current
t = f(I C)
1
IGBT
Figure 6.
Typical switching t imes as a f unct ion of gat e resist or
t = f(r g)
1
t_{d(off )}
t_f
0,1
t_d(on)
0,1
t_r
0,01
0,01
IGBT
t_{d(off )}
t_d(on)
t_f
t_r
0,001
10
30
50
70
With an inductive load at
Tj=
150
°C
V CE =
350
V
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
90
110
130
150
170
I _C (A)
Figure 7.
Typical reverse recovery t ime as a f unct ion of collect or current
t rr = f(I C)
0,16
FWD
0,12
t_rr
t_rr
0,08
t_rr
0,04
0,001
0
1
2
3
4
5
6
7
8
9
r_g (Ω)
With an inductive load at
Tj =
150
°C
V CE =
350
V
V GE =
±15
V
IC =
88
A
Figure 8.
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,12
0,09
FWD
t_rr
t_rr
0,06
t_rr
0,03
0
10
30
50
70
At
V CE= 350
V
V GE =
±15
V
R gon =
2
Ω
90
110
130
25 °C
T j:
125 °C
150 °C
150
170
I _C (A)
0
0
1
2
3
At
V CE =
350
V
V GE =
±15
V
IC =
88
A
4
5
6
7
25 °C
T j:
125 °C
150 °C
8
9
R_{g on} (Ω)
Copyright Vincotech
24
13 Nov. 2015 / Revision 3