10-FY07NPA150SM01-L364F08 Datasheet, PDF (18/32 Pages) Vincotech – Optimized for full rated bi-directional usage (4 quadrant operation)

10-FY07NPA150SM01-L364F08
10-PY07NPA150SM01-L364F08Y
datasheet
Buck Switching Characteristics
Figure 9.
Typical recovered charge as a f unct ion of collect or current
Q r = f(I C)
8
FWD
Figure 10.
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(R gon)
5
Q_r
4
6
Q_r
3
4
2
Q_r
2
1
FWD
Q_r
Q_r
Q_r
At
0
10
30
50
70
At
V CE =
350
V
V GE =
±15
V
R gon =
2
Ω
90
110
130
25 °C
T j:
125 °C
150 °C
150
170
I _C (A)
0
0
1
2
3
At
VCE=
350
V
V GE =
±15
V
I C=
90
A
4
5
6
7
25 °C
T j:
125 °C
150 °C
8
9
R_{g on} (Ω)
Figure 11.
Typical peak reverse recovery current current as a f unction of collector current
I RM = f(I C)
160
120
80
40
FWD
I_RM
I_RM
I_RM
Figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(R gon)
160
FWD
120
I_RM
I_RM
80
I_RM
40
0
10
30
50
70
At
V CE = 350
V
V GE =
±15
V
R gon =
2
Ω
90
110
130
25 °C
T j:
125 °C
150 °C
150
170
I _C (A)
0
0
1
2
3
4
5
6
7
8
9
R _{go n} (Ω)
At
V CE =
350
V
25 °C
V GE =
±15
V
T j:
125 °C
IC =
90
A
150 °C
Copyright Vincotech
18
13 Nov. 2015 / Revision 3