10-FZ06NBA110FP-M306L28 Datasheet, PDF (2/6 Pages) Vincotech – high speed IGBT with C6 MOSFET and SiC buck diodes

Tj=25°C, unless otherwise specified
Parameter
Input Boost MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
10-FZ06NBA110FP-M306L28
target datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_DS
I_D
I_Dpulse
P_tot
Vgs
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_c=25°C
T_h=80°C
T_c=80°C
600
V
17
A
19
112
A
67
W
101
±20
V
150
°C
T_stg
-40…+125
°C
T_op
-40…+(Tjmax - 25)
°C
V_is
t=2s
DC voltage
4000
V
min 12,7
mm
min 12,7
mm
copyright by Vincotech
2
Revision: 2