10-FZ06NBA110FP-M306L28 Datasheet, PDF (1/6 Pages) Vincotech – high speed IGBT with C6 MOSFET and SiC buck diodes

flowBoost0
Features
● *PS: 2x 110A parallel switch (100A IGBT and 99mΩ MOSFET)
● high speed IGBT with C6 MOSFET and SiC buck diodes
● high efficiency dual booster
● ultra fast switching frequency
● low inductance layout
Target Applications
● solar inverter
● UPS
Types
● 10-FZ06NBA110FP-M306L28
10-FZ06NBA110FP-M306L28
target datasheet
600V/110A PS*
flow0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Input Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Input Boost FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_CE
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤125°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
VRRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
600
V
72
A
96
400
A
131
W
199
±20
V
5
μs
400
V
175
°C
600
V
49
A
63
210
A
88
W
133
175
°C
copyright by Vincotech
1
Revision: 2