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| 70-W212NMC400SH01-M709P Datasheet, PDF (16/30 Pages) Vincotech – Mixed voltage NPC | |||
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70-W212NMC400SH01-M709P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
30000
dIrec/dt T
dIo/dt T
25000
20000
15000
10000
5000
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
35000
30000
dIrec/dt T
dI0/dt T
25000
20000
15000
10000
5000
FWD
0
0
200
400
At
Tj =
V CE =
V GE =
R gon =
25/125/150 °C
350
V
±15
V
1
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
100
600
I C (A) 800
0
0
2
4
6
At
Tj =
VR =
IF =
V GE =
25/125/150 °C
350
V
407
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
100
8 R gon ( â¦) 10
FWD
10-1
10-1
10-2
10-3
10-5
At
D=
R thJH =
10-4
tp / T
0,15
10-3
10-2
K/W
IGBT thermal model values
R (K/W)
0,05
0,02
0,03
0,03
0,01
Tau (s)
3,58
0,74
0,18
0,04
0,01
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
101 t p (s) 102
D = 0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
101 t p (s) 102
At
D=
R thJH =
tp / T
0,20
K/W
FWD thermal model values
R (K/W)
0,02
0,03
0,05
0,07
0,03
Tau (s)
4,55
0,92
0,19
0,05
0,02
copyright Vincotech
16
31 Jul. 2015 / Revision 2
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