70-W212NMC400SH01-M709P Datasheet, PDF (15/30 Pages) Vincotech – Mixed voltage NPC

70-W212NMC400SH01-M709P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
50
40
40
Q_{rr High T}
30
30
20
Q_{rr Low T}
20
10
10
0
0
At
200
400
At
T_j =
V _CE =
V _GE =
R _gon =
25/125/150 °C
350
V
±15
V
1
Ω
600
I C (A)
800
0
0
2
4
6
At
T_j =
V_R =
I_F =
V _GE =
25/125/150 °C
350
V
407
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
700
600
500
400
300
200
100
0
0
200
400
At
T_j =
V _CE =
V _GE =
R _gon =
25/125/150 °C
350
V
±15
V
1
Ω
FWD
I_{RRM High T}
I_{RRM Low T}
600
800
I C (A)
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
600
500
400
300
200
100
0
0
2
4
6
At
T_j =
V_R =
I_F =
V _GE =
25/125/150 °C
350
V
407
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω) ¹⁰
FWD
I_{RRM High T}
I_{RRM Low T}
8 _{R gon ( Ω)}
10
copyright Vincotech
15
31 Jul. 2015 / Revision 2